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Revision History
R1EX24064AxxS0A Data Sheet
Rev.
Date
Contents of Modification
Page
Description
0.01
1.00
1.01
Nov. 05, 2007
April. 21, 2008
Jan.13, 2009
?
?
P1
Initial issue
Deletion preliminary
Features
Endurance cycles change 10 cycles to 1,000k cycles @ 25 ° C.
Power dissipation Active(write) change 3.5mA to 3.0mA.
6
Data retentions years change 10 years to 100 years @ 25 ° C.
P4
P5
DC characteristics
Write Vcc current change 3.5 mA to 3.0 mA.
Memory cell characteristics new is described.
AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
2.00
Oct.26, 2009
P8
Addition of device address description
These pins are internally pulled-down to Vss. The device reads these pins
as Low if unconnected.
Addition of write protect description
The WP pin is internally pulled-down to Vss. Write operations for all
memory array are allowed if unconnected.
P20
Change of Vcc turn on description
·Vcc turn on speed should be longer than 10 μ s . to
·Vcc turn on rate should be longer than 2 μ s/V.
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